发明授权
- 专利标题: Pixel structure having capacitor compensation
- 专利标题(中): 具有电容补偿的像素结构
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申请号: US12626689申请日: 2009-11-27
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公开(公告)号: US08242507B2公开(公告)日: 2012-08-14
- 发明人: Hsi-Ming Chang
- 申请人: Hsi-Ming Chang
- 申请人地址: TW Bade, Taoyuan
- 专利权人: Chunghwa Picture Tubes, Ltd.
- 当前专利权人: Chunghwa Picture Tubes, Ltd.
- 当前专利权人地址: TW Bade, Taoyuan
- 代理商 Winston Hsu; Scott Margo
- 优先权: TW98133375A 20091001
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; H01L29/04 ; H01L29/15 ; H01L31/036
摘要:
A pixel structure having capacitor compensation includes a thin-film transistor, and the thin-film transistor includes a source electrode, a drain electrode, a semiconductor layer and a gate electrode. The gate electrode includes a bar-shaped main part, and at least a protrusion part or two indention parts. One of the characteristics of the present invention lies in layout patterns of the drain electrode and gate electrode. An overlapping area between the drain electrode and gate electrode, and the position of the overlapping area can both be kept by virtue of the arrangement of the protrusion part or the indention parts of the gate electrode, even when the alignment between the drain electrode and gate electrode is changed. Therefore, the gate-drain capacitor (Cgd) will not be changed so that the quality of the liquid crystal display will be improved accordingly.
公开/授权文献
- US20110079781A1 PIXEL STRUCTURE HAVING CAPACITOR COMPENSATION 公开/授权日:2011-04-07
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