发明授权
US08242507B2 Pixel structure having capacitor compensation 有权
具有电容补偿的像素结构

Pixel structure having capacitor compensation
摘要:
A pixel structure having capacitor compensation includes a thin-film transistor, and the thin-film transistor includes a source electrode, a drain electrode, a semiconductor layer and a gate electrode. The gate electrode includes a bar-shaped main part, and at least a protrusion part or two indention parts. One of the characteristics of the present invention lies in layout patterns of the drain electrode and gate electrode. An overlapping area between the drain electrode and gate electrode, and the position of the overlapping area can both be kept by virtue of the arrangement of the protrusion part or the indention parts of the gate electrode, even when the alignment between the drain electrode and gate electrode is changed. Therefore, the gate-drain capacitor (Cgd) will not be changed so that the quality of the liquid crystal display will be improved accordingly.
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