摘要:
A pixel array including first signal lines, second signal lines, switch devices, and pixel units coupling to the first signal lines and the second signal lines through the switch devices is provided. The first signal lines and the second signal lines are formed on different films. Each of the pixel units includes a common electrode line. In each of the pixel units of an ith row, the common electrode line has at least one first line segment and at least one second segment coupled to each other and formed on different films, and a distance between an (i−1)th first signal line and the first line segment is not equal to that between the (i−1)th first signal line and the second line segment. The first signal lines are either scan lines or data lines of the pixel array, and the second signal lines are the other kind.
摘要:
A fabrication method of a minute pattern at least includes following steps. A first crystallizable material layer is formed on a base material. The first crystallizable material layer is patterned to form a plurality of first patterns on the base material. A distance between every two adjacent first patterns is greater than a width of each of the first patterns. A first treatment process is performed to crystallize the first patterns. A second crystallizable material layer is formed on the base material and covers the first patterns. The second crystallizable material layer is patterned to form a plurality of second patterns on the base material. Each of the second patterns is located between the first patterns adjacent thereto, respectively.
摘要:
An array substrate includes a substrate, an organic layer, a via hole, an inorganic layer, and a patterned transparent pixel electrode layer. The thin film transistor is disposed on the substrate, and the thin film transistor comprises a drain electrode. The organic material layer covers the substrate and the thin film transistor. The via hole penetrates the organic material layer and exposes the drain electrode. The inorganic material layer covers at least a sidewall of the via hole and a part of the organic material layer, and exposes the drain electrode through the via hole. The patterned transparent pixel electrode layer is disposed on the first inorganic material layer and in the via hole, and the patterned transparent pixel electrode layer contacts the drain electrode.
摘要:
A method of manufacturing an array substrate includes the following steps. A substrate having a thin film transistor disposed thereon is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a source electrode, and a drain electrode. An organic material layer is formed to cover the substrate and the thin film transistor. A via hole is formed in the organic material layer to expose the drain electrode. A first inorganic material layer is formed to cover at least a sidewall of the via hole and a part of the organic material layer, and the first inorganic material layer exposes at least the drain electrode. A patterned transparent pixel electrode layer is formed on the first inorganic material layer, wherein the patterned transparent pixel electrode layer contacts the drain electrode through the via hole.
摘要:
A pixel structure having capacitor compensation includes a thin-film transistor, and the thin-film transistor includes a source electrode, a drain electrode, a semiconductor layer and a gate electrode. The gate electrode includes a bar-shaped main part, and at least a protrusion part or two indention parts. One of the characteristics of the present invention lies in layout patterns of the drain electrode and gate electrode. An overlapping area between the drain electrode and gate electrode, and the position of the overlapping area can both be kept by virtue of the arrangement of the protrusion part or the indention parts of the gate electrode, even when the alignment between the drain electrode and gate electrode is changed. Therefore, the gate-drain capacitor (Cgd) will not be changed so that the quality of the liquid crystal display will be improved accordingly.
摘要:
The resistance measuring device of the present invention includes switch transistors and switch conductive lines disposed between the bonding pads on a first substrate and between the bumps on a second substrate, such that the bonding pads and the bumps are conducted when the transistors are turned on, and the bonding resistance between at least one of the bonding pads and its corresponding bump can be directly measured.
摘要:
A switching device structure of active matrix display is provided. The switching device structure includes a substrate, a plurality of switching-device gate connection lines disposed on the substrate along a first direction and a plurality of switching devices disposed on the substrate along the first direction. Each switching device includes a gate electrode electrically connected to the any two adjacent switching-device gate connection lines, and the gate electrode protrudes from at least one side of the switching-device gate connection line along a second direction.
摘要:
A fabricating method of display panel is provided. A first substrate having display area and non-display area is provided. A pixel array and a spacer layer are respectively formed in the display area and non-display area by forming many first strip electrodes parallel to each other and on the substrate, by forming an organic function layer on the substrate and covering the first strip electrodes, and by forming many second strip electrodes parallel to each other and on the organic function layer. An extension direction of the first strip electrodes is different to that of the second strip electrodes. The spacer layer surrounds the display area. A sealant is formed in the non-display area, and the spacer layer is disposed between the sealant and the pixel array. A second substrate is arranged above the first substrate, and the first substrate and the second substrate are fixed by using the sealant.
摘要:
A method for forming a pattern is provided. First, a substrate is provided. Then, a discontinuous film is formed on the substrate so as to reduce the stress of the film. After that, the discontinuous film is patterned to form a pattern. Besides, a method for manufacturing a thin film transistor (TFT) is also provided. First, a substrate is provided. Then, a poly silicon island is formed on the substrate. After that, a gate insulating layer is formed to cover the poly silicon island. Then, a gate is formed on the gate insulating layer. After that, a source/drain is formed in the poly silicon island below one side and the other side of the gate respectively, and a channel layer is formed between the source/drain. At least one of the poly silicon island and the gate is formed according to the above mentioned method for forming the pattern.
摘要:
A fabricating method of display panel is provided. A first substrate having display area and non-display area is provided. A pixel array is formed in the display area of the first substrate, and at the same time, a spacer layer is formed in the non-display area. The spacer layer surrounds the display area. Next, a sealant is formed in the non-display area, and the spacer layer is disposed between the sealant and the pixel array. A second substrate is arranged above the first substrate, and the first substrate and the second substrate are fixed by using the sealant. The spacer layer can prevent the overflow sealant from contaminating the devices in the panel. The spacer layer is formed during the fabricating process of the pixel array, so that no extra fabrication cost is needed.