发明授权
US08242601B2 Semiconductor chip with passivation layer comprising metal interconnect and contact pads
有权
具有钝化层的半导体芯片包括金属互连和接触焊盘
- 专利标题： Semiconductor chip with passivation layer comprising metal interconnect and contact pads
- 专利标题（中）： 具有钝化层的半导体芯片包括金属互连和接触焊盘
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申请号： US12464896申请日： 2009-05-13
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公开(公告)号： US08242601B2公开(公告)日： 2012-08-14
- 发明人: Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin
- 申请人： Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin
- 申请人地址： TW Hsinchu
- 专利权人： Megica Corporation
- 当前专利权人： Megica Corporation
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
The invention provides a semiconductor chip comprising a semiconductor substrate comprising a MOS device, an interconnecting structure over said semiconductor substrate, and a metal bump over said MOS device, wherein said metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.
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