Invention Grant
US08242863B2 Active inductance for very high frequencies based on CMOS inverters
有权
基于CMOS逆变器的非常高频的有源电感
- Patent Title: Active inductance for very high frequencies based on CMOS inverters
- Patent Title (中): 基于CMOS逆变器的非常高频的有源电感
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Application No.: US12192793Application Date: 2008-08-15
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Publication No.: US08242863B2Publication Date: 2012-08-14
- Inventor: Oliver Schmitz , Sven Karsten Hampel , Fabian Beichert , Marc Tiebout
- Applicant: Oliver Schmitz , Sven Karsten Hampel , Fabian Beichert , Marc Tiebout
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Lee & Hayes, PLLC
- Main IPC: H03H11/00
- IPC: H03H11/00
Abstract:
The present disclosure relates to techniques for simulating electrical inductance.
Public/Granted literature
- US20100039192A1 Active Inductance for Very High Frequencies Based on CMOS Inverters Public/Granted day:2010-02-18
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