发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
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申请号: US12884452申请日: 2010-09-17
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公开(公告)号: US08243498B2公开(公告)日: 2012-08-14
- 发明人: Keiko Abe , Shinobu Fujita
- 申请人: Keiko Abe , Shinobu Fujita
- 申请人地址: JP Minato-ku, Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku, Tokyo
- 代理机构: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- 优先权: JP2010-049912 20100305
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
According to one embodiment, a semiconductor integrated circuit includes first and second inverters, a first transistor which has a gate connected to a word line, a source connected to a first bit line, and a drain connected to an input terminal of the second inverter, a second transistor which has a gate connected to the word line, a source connected to a second bit line, and a drain connected to an input terminal of the first inverter, a first variable resistive element which has a first terminal connected to the drain of the first transistor, and a second terminal connected to an output terminal of the first inverter, and a second variable resistive element which has a first terminal connected to the drain of the second transistor, and a second terminal connected to an output terminal of the second inverter.
公开/授权文献
- US20110216573A1 SEMICONDUCTOR INTEGRATED CIRCUIT 公开/授权日:2011-09-08
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