Invention Grant
- Patent Title: Semiconductor memory device and test method thereof
-
Application No.: US13137768Application Date: 2011-09-12
-
Publication No.: US08243540B2Publication Date: 2012-08-14
- Inventor: Hyong-yong Lee , Chan-sub Jun
- Applicant: Hyong-yong Lee , Chan-sub Jun
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2007-0018053 20070222
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Example embodiments disclose a semiconductor memory device and a test method thereof. The semiconductor memory device includes a memory cell array that provides first and second data groups at a first data rate and an output circuit, in a normal mode of operation, serially outputs the first and second data groups at a first data rate on an external terminal. In a test mode of operation, the output circuit outputs the first data group or the second data group at a second data rate on the external terminal in response to control signals, without switching the test mode. The second data rate may be lower than the first data rate.
Public/Granted literature
- US20120014189A1 Semiconductor memory device and test method thereof Public/Granted day:2012-01-19
Information query