Invention Grant
US08246743B2 Single crystal silicon carbide nanowire, method of preparation thereof, and filter comprising the same
有权
单晶碳化硅纳米线，其制备方法和包含该单晶碳化硅纳米线的过滤器
- Patent Title: Single crystal silicon carbide nanowire, method of preparation thereof, and filter comprising the same
- Patent Title (中): 单晶碳化硅纳米线，其制备方法和包含该单晶碳化硅纳米线的过滤器
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Application No.: US11919809Application Date: 2007-08-16
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Publication No.: US08246743B2Publication Date: 2012-08-21
- Inventor: Sung-Churl Choi , Sang-Hoon Lee , Jin-Seok Lee , Yun-Ki Byeun
- Applicant: Sung-Churl Choi , Sang-Hoon Lee , Jin-Seok Lee , Yun-Ki Byeun
- Applicant Address: KR Seoul
- Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee Address: KR Seoul
- Agency: Christie, Parker & Hale, LLP
- International Application: PCT/KR2007/003921 WO 20070816
- International Announcement: WO2008/018782 WO 20080214
- Main IPC: C30B1/00
- IPC: C30B1/00
Abstract:
Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.
Public/Granted literature
- US20100293910A1 Single crystal silicon carbaide nanowire, method of preparation thereof, and filter comprising the same Public/Granted day:2010-11-25
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