发明授权
- 专利标题： Nonvolatile semiconductor memory device and method of manufacturing the same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12708161申请日： 2010-02-18
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公开(公告)号： US08247863B2公开(公告)日： 2012-08-21
- 发明人: Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi
- 申请人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-042786 20090225
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A memory string comprises: a pair of columnar portions; a first insulating layer surrounding a side surface of the columnar portions; a charge storage layer surrounding a side surface of the first insulating layer; a second insulating layer surrounding a side surface of the charge storage layer; and a first conductive layer surrounding a side surface of the second insulating layer. A select transistor comprises: a second semiconductor layer extending from an upper surface of the columnar portions; a third insulating layer surrounding a side surface of the second semiconductor layer; a fourth insulating layer surrounding a side surface of the third insulating layer; and a second conductive layer surrounding a side surface of the fourth insulating layer. The first semiconductor layer is formed continuously in an integrated manner with the second semiconductor layer. The first insulating layer is formed continuously in an integrated manner with the third insulating layer.
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