发明授权
US08248848B1 System and methods for multi-level nonvolatile memory read, program and erase
有权
用于多级非易失性存储器读取，编程和擦除的系统和方法
- 专利标题： System and methods for multi-level nonvolatile memory read, program and erase
- 专利标题（中）： 用于多级非易失性存储器读取，编程和擦除的系统和方法
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申请号： US12240123申请日： 2008-09-29
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公开(公告)号： US08248848B1公开(公告)日： 2012-08-21
- 发明人: Qiang Tang , Bo Wang , Chih-Hsin Wang
- 申请人： Qiang Tang , Bo Wang , Chih-Hsin Wang
- 申请人地址： BM Hamilton
- 专利权人： Marvell International Ltd.
- 当前专利权人： Marvell International Ltd.
- 当前专利权人地址： BM Hamilton
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C7/06
摘要：
A memory circuit includes a memory array with multi-level cells that are each capable of storing M bits of data, where M is an integer greater than one. A module reads a state of one of the multi-level cells. The module performs at least one of a first erase operation and a first program operation on the one of the multi-level cells for the M bits of data during a first time period.
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