Invention Grant
US08248848B1 System and methods for multi-level nonvolatile memory read, program and erase
有权
用于多级非易失性存储器读取，编程和擦除的系统和方法
- Patent Title: System and methods for multi-level nonvolatile memory read, program and erase
- Patent Title (中): 用于多级非易失性存储器读取，编程和擦除的系统和方法
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Application No.: US12240123Application Date: 2008-09-29
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Publication No.: US08248848B1Publication Date: 2012-08-21
- Inventor: Qiang Tang , Bo Wang , Chih-Hsin Wang
- Applicant: Qiang Tang , Bo Wang , Chih-Hsin Wang
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C7/06
Abstract:
A memory circuit includes a memory array with multi-level cells that are each capable of storing M bits of data, where M is an integer greater than one. A module reads a state of one of the multi-level cells. The module performs at least one of a first erase operation and a first program operation on the one of the multi-level cells for the M bits of data during a first time period.
Information query
