发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13116379申请日： 2011-05-26
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公开(公告)号： US08252637B2公开(公告)日： 2012-08-28
- 发明人: Shunpei Yamazaki , Jun Koyama
- 申请人： Shunpei Yamazaki , Jun Koyama
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP10-361535 19981218
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween.
公开/授权文献
- US20110230018A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2011-09-22
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