发明授权
US08252662B1 Method and structure for manufacture of light emitting diode devices using bulk GaN
有权
使用体GaN制造发光二极管器件的方法和结构
- 专利标题: Method and structure for manufacture of light emitting diode devices using bulk GaN
- 专利标题(中): 使用体GaN制造发光二极管器件的方法和结构
-
申请号: US12749476申请日: 2010-03-29
-
公开(公告)号: US08252662B1公开(公告)日: 2012-08-28
- 发明人: Christiane Poblenz , Mathew C. Schmidt , Daniel F. Feezell , James W. Raring , Rajat Sharma
- 申请人: Christiane Poblenz , Mathew C. Schmidt , Daniel F. Feezell , James W. Raring , Rajat Sharma
- 申请人地址: US CA Fremont
- 专利权人: Soraa, Inc.
- 当前专利权人: Soraa, Inc.
- 当前专利权人地址: US CA Fremont
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 主分类号: H01L21/30
- IPC分类号: H01L21/30
摘要:
A method for manufacturing a plurality light emitting diodes includes providing a gallium nitride containing bulk crystalline substrate material configured in a non-polar or semi-polar crystallographic orientation, forming an etch stop layer, forming an n-type layer overlying the etch stop layer, forming an active region, a p-type layer, and forming a metallization. The method includes removing a thickness of material from the backside of the bulk gallium nitride containing substrate material. A plurality of individual LED devices are formed from at least a sandwich structure comprising portions of the metallization layer, the p-type layer, active layer, and the n-type layer. The LED devices are joined to a carrier structure. The method also includes subjecting the gallium nitride containing bulk crystalline substrate material to at least one etching process to selectively remove crystalline material underlying the etch stop layer, wherein the etch stop layer is exposed, and the etch stop layer remains substantially intact.
信息查询
IPC分类: