公开(公告)号：US08451876B1

公开(公告)日：2013-05-28

申请号：US13108645

申请日：2011-05-16

Applicant: James W. Raring ,  Mathew C. Schmidt ,  Yu-Chia Chang

Inventor： James W. Raring ,  Mathew C. Schmidt ,  Yu-Chia Chang

IPC: H01S5/00

CPC classification number: H01S5/0427 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/06 ,  H01S5/0425 ,  H01S5/0651 ,  H01S5/0652 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34 ,  H01S5/3407 ,  H01S5/3414 ,  H01S5/34333 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/02

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract translation: 描述了提供具有广谱的激光二极管的系统和方法。 具有宽或多峰频谱输出操作的GaN基激光二极管通过具有产生多峰频谱输出的单个激光二极管器件，以超亮度模式操作或通过使用RF源和/或反馈来获得各种配置 信号。 在一些其他实施例中，通过使多个激光器件输出不同波长的不同激光器来实现多峰输出。

公开(公告)号：US08048225B2

公开(公告)日：2011-11-01

申请号：US12556562

申请日：2009-09-09

Applicant: Christiane Poblenz ,  Mathew C. Schmidt ,  Derrick S. Kamber

Inventor： Christiane Poblenz ,  Mathew C. Schmidt ,  Derrick S. Kamber

IPC: C30B21/04

CPC classification number: C30B29/403 ,  C30B23/025 ,  C30B25/18 ,  C30B29/406

Abstract: The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.

Abstract translation: 本发明包括用于氨热GaN生长的高质量，大面积体积GaN晶种及其制造方法。 晶种具有超低缺陷密度，具有无弯曲的平坦表面，并且不含异物基材。 晶种可用于通过氨热生长方法生产大容量，高质量的体GaN晶体，用于最终晶片化成用于器件制造的大面积GaN衬底。

公开(公告)号：US20080164489A1

公开(公告)日：2008-07-10

申请号：US12001286

申请日：2007-12-11

Applicant: Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract translation: 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

公开(公告)号：US20080163814A1

公开(公告)日：2008-07-10

申请号：US11954172

申请日：2007-12-11

Applicant: Kwang Choong Kim ,  Mathew C. Schmidt ,  Feng Wu ,  Asako Hirai ,  Melvin B. McLaurin ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

Inventor： Kwang Choong Kim ,  Mathew C. Schmidt ,  Feng Wu ,  Asako Hirai ,  Melvin B. McLaurin ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: C30B23/04

CPC classification number: C30B25/04 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

Abstract: A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Abstract translation: 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在电介质掩模上横向生长，直到实现完全聚结的连续膜。

公开(公告)号：US08178373B2

公开(公告)日：2012-05-15

申请号：US12914906

申请日：2010-10-28

Applicant: Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitsohi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitsohi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract translation: 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

公开(公告)号：US20120104359A1

公开(公告)日：2012-05-03

申请号：US13291922

申请日：2011-11-08

Applicant: Andrew Felker ,  Nicholas A. Vickers ,  Rafael Aldaz ,  David Press ,  Nicholas J. Pfister ,  James W. Raring ,  Mathew C. Schmidt ,  Kenneth John Thomson

Inventor： Andrew Felker ,  Nicholas A. Vickers ,  Rafael Aldaz ,  David Press ,  Nicholas J. Pfister ,  James W. Raring ,  Mathew C. Schmidt ,  Kenneth John Thomson

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/20 ,  B82Y20/00 ,  H01L33/0095 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00

Abstract: A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Abstract translation: 一种形成光学器件的方法包括提供具有结晶表面区域和背面区域的氮化镓衬底。 将背面进行激光划线处理以形成划线区域。 金属接触过度的划痕区域。

公开(公告)号：US20110037052A1

公开(公告)日：2011-02-17

申请号：US12914906

申请日：2010-10-28

Applicant: Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitsohi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitsohi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/04 ,  H01L33/32

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract translation: 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

公开(公告)号：US09130119B2

公开(公告)日：2015-09-08

申请号：US12001227

申请日：2007-12-11

Applicant: Steven P. DenBaars ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  James S. Speck ,  Shuji Nakamura

Inventor： Steven P. DenBaars ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/22 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3404 ,  H01S5/34333

Abstract: An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.

Abstract translation: 一种（Al，Ga，In）N发光器件，例如发光二极管（LED），其中通过以非极性或半极性III氮化物晶体几何形状制造器件来实现高发光效率。 因为非极性和半极性发射器件具有比c面发射器件显着更低的压电效应，所以可以实现在更高电流密度下的更高效率的发射器件。

公开(公告)号：US08975615B2

公开(公告)日：2015-03-10

申请号：US13291922

申请日：2011-11-08

Applicant: Andrew Felker ,  Nicholas A. Vickers ,  Rafael Aldaz ,  David Press ,  Nicholas J. Pfister ,  James W. Raring ,  Mathew C. Schmidt ,  Kenneth John Thomson

Inventor： Andrew Felker ,  Nicholas A. Vickers ,  Rafael Aldaz ,  David Press ,  Nicholas J. Pfister ,  James W. Raring ,  Mathew C. Schmidt ,  Kenneth John Thomson

IPC: H01L33/06 ,  H01L33/20 ,  B82Y20/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01L33/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/343

CPC classification number: H01L33/20 ,  B82Y20/00 ,  H01L33/0095 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00

Abstract: A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Abstract translation: 一种形成光学器件的方法包括提供具有结晶表面区域和背面区域的氮化镓衬底。 将背面进行激光划线处理以形成划线区域。 金属接触过度的划痕区域。

公开(公告)号：US08956896B2

公开(公告)日：2015-02-17

申请号：US13440087

申请日：2012-04-05

Applicant: Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L21/36 ,  H01L33/00 ,  H01L21/00 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/343

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract translation: 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。