Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing it
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US11975888Application Date: 2007-10-22
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Publication No.: US08253150B2Publication Date: 2012-08-28
- Inventor: Yuji Furushima , Tetsuya Konno , Fujimoto Tsuyoshi
- Applicant: Yuji Furushima , Tetsuya Konno , Fujimoto Tsuyoshi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rockey, Depke & Lyons, LLC
- Agent Robert J. Depke
- Priority: JPP2006-305926 20061110
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light emitting device capable of precisely detecting a cleavage position is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, a connection pad electrically connected to a p-side electrode, and marks arranged with one end in the plain face of cleavage face S3 or cleavage face S4 on an insulating layer formed on the side of a second substrate facing to a first substrate.
Public/Granted literature
- US20080111142A1 Semiconductor light emitting device and method of manufacturing it Public/Granted day:2008-05-15
Information query
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