Invention Grant
- Patent Title: Interconnection architectures for multilayer crossbar circuits
- Patent Title (中): 多层交叉电路的互连架构
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Application No.: US12912647Application Date: 2010-10-26
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Publication No.: US08253443B2Publication Date: 2012-08-28
- Inventor: Warren Robinett
- Applicant: Warren Robinett
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H01L25/00 ; H01L21/82 ; H01L21/3205
Abstract:
An interconnection architecture for multilayer circuits includes metal-insulator transition channels interposed between address leads and each bar in the multilayer circuit. An extrinsic variable transducer selectively transitions the metal-insulator channels between insulating and conducting states to selectively connect and disconnect the bars and the address leads. A method for accessing a programmable crosspoint device within a multilayer crossbar circuit is also provided.
Public/Granted literature
- US20120098566A1 Interconnection Architectures for Multilayer Crossbar Circuits Public/Granted day:2012-04-26
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