发明授权
US08254158B2 Semiconductor device having resistance based memory array and method of operation associated therewith 有权
具有基于电阻的存储器阵列的半导体器件和与其相关联的操作方法

Semiconductor device having resistance based memory array and method of operation associated therewith
摘要:
In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.
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