发明授权
US08254158B2 Semiconductor device having resistance based memory array and method of operation associated therewith
有权
具有基于电阻的存储器阵列的半导体器件和与其相关联的操作方法
- 专利标题: Semiconductor device having resistance based memory array and method of operation associated therewith
- 专利标题(中): 具有基于电阻的存储器阵列的半导体器件和与其相关联的操作方法
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申请号: US12646345申请日: 2009-12-23
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公开(公告)号: US08254158B2公开(公告)日: 2012-08-28
- 发明人: Yong-Jun Lee , Kwangjin Lee , Taek-Sung Kim , Kwangho Kim , Wooyeong Cho , Hyunho Choi , Hye-Jin Kim , Qi Wang
- 申请人: Yong-Jun Lee , Kwangjin Lee , Taek-Sung Kim , Kwangho Kim , Wooyeong Cho , Hyunho Choi , Hye-Jin Kim , Qi Wang
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2007-0138978 20071227
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.
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