Invention Grant
US08254159B2 Method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation
有权
对执行读写操作的非易失性半导体存储器件的位线进行放电的方法
- Patent Title: Method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation
- Patent Title (中): 对执行读写操作的非易失性半导体存储器件的位线进行放电的方法
-
Application No.: US12662512Application Date: 2010-04-21
-
Publication No.: US08254159B2Publication Date: 2012-08-28
- Inventor: Yong-Jun Lee , Byung-Gil Choi , Du-Eung Kim
- Applicant: Yong-Jun Lee , Byung-Gil Choi , Du-Eung Kim
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0056769 20090625
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In a method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation. The method include discharging a global write bit-line to a ground voltage based on a write command within a first period. The method also includes maintaining the discharged voltage of the global write bit-line in the ground voltage during a second period.
Public/Granted literature
Information query
