发明授权
- 专利标题: Non-volatile memory device and method therefor
- 专利标题(中): 非易失性存储器件及其方法
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申请号: US12685856申请日: 2010-01-12
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公开(公告)号: US08255616B2公开(公告)日: 2012-08-28
- 发明人: Ross S. Scouller , Daniel L. Andre , Stephen F. McGinty
- 申请人: Ross S. Scouller , Daniel L. Andre , Stephen F. McGinty
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A method of storing information at a non-volatile memory includes storing a first status bit at a sector header of the memory prior to erasing a sector at the memory. A second status bit is stored after erasing of the sector. Because the erasure of the sector is interleaved with the storage of the status bits, a brownout or other corrupting event during erasure of the record will likely result in a failure to store the second status bit. Therefore, the first and second status bits can be compared to determine if the data was properly erased at the non-volatile memory. Further, multiple status bits can be employed to indicate the status of other memory sectors, so that a difference in the status bits for a particular sector can indicate a brownout or other corrupting event.
公开/授权文献
- US20110173373A1 NON-VOLATILE MEMORY DEVICE AND METHOD THEREFOR 公开/授权日:2011-07-14
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