Invention Grant
- Patent Title: Sealing layer of a field effect transistor
- Patent Title (中): 场效应晶体管的密封层
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Application No.: US12757241Application Date: 2010-04-09
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Publication No.: US08258588B2Publication Date: 2012-09-04
- Inventor: Yu Chao Lin , Jr Jung Lin , Yih-Ann Lin , Jih-Jse Lin , Chao-Cheng Chen , Ryan Chia-Jen Chen , Weng Chang
- Applicant: Yu Chao Lin , Jr Jung Lin , Yih-Ann Lin , Jih-Jse Lin , Chao-Cheng Chen , Ryan Chia-Jen Chen , Weng Chang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L21/8238
Abstract:
An exemplary structure for a gate structure of a field effect transistor comprises a gate electrode; a gate insulator under the gate electrode having footing regions on opposing sides of the gate electrode; and a sealing layer on sidewalls of the gate structure, wherein a thickness of lower portion of the sealing layer overlying the footing regions is less than a thickness of upper portion of the sealing layer on sidewalls of the gate electrode, whereby the field effect transistor made has almost no recess in the substrate surface.
Public/Granted literature
- US20110031562A1 SEALING LAYER OF A FIELD EFFECT TRANSISTOR Public/Granted day:2011-02-10
Information query
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