Invention Grant
- Patent Title: Test device and semiconductor integrated circuit device
- Patent Title (中): 测试器件和半导体集成电路器件
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Application No.: US12458535Application Date: 2009-07-15
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Publication No.: US08258805B2Publication Date: 2012-09-04
- Inventor: Sang-Jin Lee , Gin-Kyu Lee
- Applicant: Sang-Jin Lee , Gin-Kyu Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0069544 20080717
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L23/58

Abstract:
A test device and a semiconductor integrated circuit are provided. The test device may include a first test region and a second test region defined on a semiconductor substrate. The first test region may include a first test element and the second region may include a second test element. The first test element may include a pair of first secondary test regions in the semiconductor substrate extending in a first direction. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions.
Public/Granted literature
- US20100013514A1 Test device and semiconductor integrated circuit device Public/Granted day:2010-01-21
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