发明授权
- 专利标题： Semiconductor memory device and a method of controlling a semiconductor memory device
- 专利标题（中）： 半导体存储器件和控制半导体存储器件的方法
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申请号： US12892462申请日： 2010-09-28
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公开(公告)号： US08259528B2公开(公告)日： 2012-09-04
- 发明人: Noriaki Kodama , Takuji Onuma
- 申请人： Noriaki Kodama , Takuji Onuma
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2009-224896 20090929
- 主分类号： G11C17/18
- IPC分类号： G11C17/18
摘要：
A semiconductor memory device includes a first anti-fuse element and a second anti-fuse element, respectively composed of a transistor, wherein the first anti-fuse element and the second anti-fuse element are configured so as to be concomitantly programmable, respectively formed in P-wells on a substrate, and the adjacent P-wells are isolated by N-wells of an opposite conductivity type, formed therebetween.
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