Invention Grant
US08263480B2 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires
有权
水平纳米线的位置选择性生长方法，纳米线生长方法和包含纳米线的纳米器件
- Patent Title: Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires
- Patent Title (中): 水平纳米线的位置选择性生长方法，纳米线生长方法和包含纳米线的纳米器件
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Application No.: US12708007Application Date: 2010-02-18
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Publication No.: US08263480B2Publication Date: 2012-09-11
- Inventor: Eun Kyung Lee , Byoung Lyong Choi , Young Kuk , Je Hyuk Choi , Hun Huy Jung
- Applicant: Eun Kyung Lee , Byoung Lyong Choi , Young Kuk , Je Hyuk Choi , Hun Huy Jung
- Applicant Address: KR KR
- Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee Address: KR KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2007-0087146 20070829
- Main IPC: H01L21/203
- IPC: H01L21/203
Abstract:
Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
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