Invention Grant
US08263502B2 Forming substrate structure by filling recesses with deposition material
有权
通过用沉积材料填充凹槽来形成基底结构
- Patent Title: Forming substrate structure by filling recesses with deposition material
- Patent Title (中): 通过用沉积材料填充凹槽来形成基底结构
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Application No.: US12539289Application Date: 2009-08-11
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Publication No.: US08263502B2Publication Date: 2012-09-11
- Inventor: Sang In Lee
- Applicant: Sang In Lee
- Applicant Address: US CA Fremont
- Assignee: Synos Technology, Inc.
- Current Assignee: Synos Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Fenwick & West LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.
Public/Granted literature
- US20100041179A1 Forming Substrate Structure by Filling Recesses with Deposition Material Public/Granted day:2010-02-18
Information query
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