发明授权
- 专利标题： Capacitive element, method of manufacture of the same, and semiconductor device
- 专利标题（中）： 电容元件及其制造方法以及半导体器件
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申请号： US12222764申请日： 2008-08-15
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公开(公告)号： US08264063B2公开(公告)日： 2012-09-11
- 发明人: Takeshi Shioga , John David Baniecki , Kazuaki Kurihara
- 申请人： Takeshi Shioga , John David Baniecki , Kazuaki Kurihara
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01G4/228
摘要：
A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).
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