Invention Grant
- Patent Title: Non-volatile memory device and charge pump circuit for the same
- Patent Title (中): 非易失性存储器件和电荷泵电路相同
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Application No.: US13301534Application Date: 2011-11-21
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Publication No.: US08264274B2Publication Date: 2012-09-11
- Inventor: Yung Feng Lin , Nai-Ping Kuo
- Applicant: Yung Feng Lin , Nai-Ping Kuo
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A charge pump apparatus comprises a plurality of charge pump stages. The charge pump stages each include a respective output node. Output nodes are connected to charge boosting circuitry and to precharge circuitry. The charge boosting circuit receives one or more clock signals. The precharge circuits have a first state allowing the respective pump-stage output node to fluctuate at a level above a standby wordline voltage, and a second state coupling the respective pump-stage output node to the standby wordline voltage.
Public/Granted literature
- US20120063250A1 NON-VOLATILE MEMORY DEVICE AND CHARGE PUMP CIRCUIT FOR THE SAME Public/Granted day:2012-03-15
Information query
IPC分类: