Invention Grant
US08264274B2 Non-volatile memory device and charge pump circuit for the same 有权
非易失性存储器件和电荷泵电路相同

Non-volatile memory device and charge pump circuit for the same
Abstract:
A charge pump apparatus comprises a plurality of charge pump stages. The charge pump stages each include a respective output node. Output nodes are connected to charge boosting circuitry and to precharge circuitry. The charge boosting circuit receives one or more clock signals. The precharge circuits have a first state allowing the respective pump-stage output node to fluctuate at a level above a standby wordline voltage, and a second state coupling the respective pump-stage output node to the standby wordline voltage.
Public/Granted literature
Information query
Patent Agency Ranking
0/0