Invention Grant
US08264865B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
有权
非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
- Patent Title: Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
- Patent Title (中): 非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
-
Application No.: US12677404Application Date: 2009-07-01
-
Publication No.: US08264865B2Publication Date: 2012-09-11
- Inventor: Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
- Applicant: Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-180946 20080711
- International Application: PCT/JP2009/003055 WO 20090701
- International Announcement: WO2010/004705 WO 20100114
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8
Public/Granted literature
Information query
