发明授权
US08264865B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
有权
非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
- 专利标题： Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
- 专利标题（中）： 非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
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申请号： US12677404申请日： 2009-07-01
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公开(公告)号： US08264865B2公开(公告)日： 2012-09-11
- 发明人: Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
- 申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2008-180946 20080711
- 国际申请： PCT/JP2009/003055 WO 20090701
- 国际公布： WO2010/004705 WO 20100114
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8
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