发明授权
- 专利标题: Substrate processing method, and program storage medium therefor
- 专利标题(中): 基板处理方法及其程序存储介质
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申请号: US13209741申请日: 2011-08-15
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公开(公告)号: US08266820B2公开(公告)日: 2012-09-18
- 发明人: Hideki Nishimura , Mikio Nakashima
- 申请人: Hideki Nishimura , Mikio Nakashima
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Smith, Gambrell & Russell, LLP
- 优先权: JP2006-243276 20060907
- 主分类号: F26B3/00
- IPC分类号: F26B3/00
摘要:
A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.
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