发明授权
- 专利标题： Isolation for nanowire devices
- 专利标题（中）： 纳米线器件隔离
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申请号： US12653847申请日： 2009-12-18
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公开(公告)号： US08269209B2公开(公告)日： 2012-09-18
- 发明人: Uday Shah , Benjamin Chu-Kung , Been Y. Jin , Ravi Pillarisetty , Marko Radosavljevic , Willy Rachmady
- 申请人： Uday Shah , Benjamin Chu-Kung , Been Y. Jin , Ravi Pillarisetty , Marko Radosavljevic , Willy Rachmady
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Winkle, PLLC
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation structure adjacent the nanowire provides a substantially level surface for the formation of microelectronic structures thereon.
公开/授权文献
- US20110147697A1 Isolation for nanowire devices 公开/授权日：2011-06-23
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