Invention Grant
- Patent Title: Isolation for nanowire devices
- Patent Title (中): 纳米线器件隔离
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Application No.: US12653847Application Date: 2009-12-18
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Publication No.: US08269209B2Publication Date: 2012-09-18
- Inventor: Uday Shah , Benjamin Chu-Kung , Been Y. Jin , Ravi Pillarisetty , Marko Radosavljevic , Willy Rachmady
- Applicant: Uday Shah , Benjamin Chu-Kung , Been Y. Jin , Ravi Pillarisetty , Marko Radosavljevic , Willy Rachmady
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation structure adjacent the nanowire provides a substantially level surface for the formation of microelectronic structures thereon.
Public/Granted literature
- US20110147697A1 Isolation for nanowire devices Public/Granted day:2011-06-23
Information query
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