Invention Grant
- Patent Title: Structure of high-frequency components with low stray capacitances
- Patent Title (中): 具有低杂散电容的高频分量的结构
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Application No.: US12059600Application Date: 2008-03-31
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Publication No.: US08269252B2Publication Date: 2012-09-18
- Inventor: Jean-Michel Simonnet , André Lhorte , Patrick Poveda
- Applicant: Jean-Michel Simonnet , André Lhorte , Patrick Poveda
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR0754221 20070402
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
Public/Granted literature
- US20080237785A1 STRUCTURE OF HIGH-FREQUENCY COMPONENTS WITH LOW STRAY CAPACITANCES Public/Granted day:2008-10-02
Information query
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