A semiconductor device 1 has a through hole 3 formed in a second substrate 2. On the front surface of the semiconductor substrate 2, a first insulating layer 4 is coated having an opening 4a of the same diameter as that of the through hole 3, and a first wiring layer 5 is formed on the first insulating layer 4. Further, near the first wiring layer 5, the through hole 3 and a through connection portion constituted of a third insulating layer 8 formed on the inner surface and the like and a third wiring layer 9 filled and formed in the through hole 3 are formed. In addition, a second wiring layer 7 internally contacting the through connection portion is electrically connected with the first wiring layer 5. Between the inner surface of the through hole 3 and the first wiring layer 5, a second insulating layer 6 intervenes so that the first wiring layer 5 is separated from the third wiring layer 9 filled and formed in the through hole 3.