Invention Grant
- Patent Title: Side emitting semiconductor package
- Patent Title (中): 侧面发射半导体封装
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Application No.: US12900676Application Date: 2010-10-08
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Publication No.: US08270444B2Publication Date: 2012-09-18
- Inventor: Min-Tsun Hsieh , Wen-Liang Tseng , Lung-Hsin Chen , Chih-Yung Lin
- Applicant: Min-Tsun Hsieh , Wen-Liang Tseng , Lung-Hsin Chen , Chih-Yung Lin
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: TW99105297A 20100224
- Main IPC: H01S3/00
- IPC: H01S3/00 ; H01L33/00
Abstract:
A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides.
Public/Granted literature
- US20110206079A1 SIDE EMITTING SEMICONDUCTOR PACKAGE Public/Granted day:2011-08-25
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