A method of enhancing dopant activation without suffering additional dopant diffusion, includes forming shallow and lightly-doped source/drain extension regions in a semiconductor substrate, performing a first anneal process on the source/drain extension regions, forming deep and heavily-doped source/drain regions in the substrate adjacent to the source/drain extension regions, and performing a second anneal process on source/drain regions. The first anneal process is a flash anneal process performed for a time of between about 1 millisecond and 3 milliseconds, and the second anneal process is a rapid thermal anneal process performed for a time of between about 1 second and 30 seconds.