发明授权
- 专利标题： Memory devices and methods of manufacturing the same
- 专利标题（中）： 存储器件及其制造方法
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申请号： US12213062申请日： 2008-06-13
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公开(公告)号： US08274067B2公开(公告)日： 2012-09-25
- 发明人: Seung-eon Ahn , Myoung-jae Lee , Suk-pil Kim , Young-soo Park
- 申请人： Seung-eon Ahn , Myoung-jae Lee , Suk-pil Kim , Young-soo Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, PLC
- 优先权： KR10-2007-0058574 20070614; KR10-2008-0031366 20080403
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
Memory devices and methods of manufacturing the same are provided. In a memory device, a memory-switch structure is formed between a first and second electrode. The memory-switch structure includes a memory resistor and a switch structure. The switch structure controls current supplied to the memory resistor. A memory region of the memory resistor and a switch region of the switch structure are different from each other.
公开/授权文献
- US20080308783A1 Memory devices and methods of manufacturing the same 公开/授权日：2008-12-18