Invention Grant
- Patent Title: Production method of photoelectric conversion device and solution for forming semiconductor
- Patent Title (中): 光电转换装置的制造方法及半导体成膜方法
-
Application No.: US13062494Application Date: 2010-03-29
-
Publication No.: US08278134B2Publication Date: 2012-10-02
- Inventor: Isamu Tanaka , Seiichiro Inai , Yoshihide Okawa , Daisuke Nishimura , Sentaro Yamamoto
- Applicant: Isamu Tanaka , Seiichiro Inai , Yoshihide Okawa , Daisuke Nishimura , Sentaro Yamamoto
- Applicant Address: JP Kyoto
- Assignee: Kyocera Corporation
- Current Assignee: Kyocera Corporation
- Current Assignee Address: JP Kyoto
- Agency: DLA Piper LLP (US)
- International Application: PCT/JP2010/055566 WO 20100329
- International Announcement: WO2011/121701 WO 20111006
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.
Public/Granted literature
- US20110244624A1 Production Method of Photoelectric Conversion Device and Solution for Forming Semiconductor Public/Granted day:2011-10-06
Information query
IPC分类:
