Methods for fabricating semiconductor devices are provided. The methods include providing a semiconductor substrate having pFET and nFET regions, each having active areas and shallow trench isolation. A hardmask layer is formed overlying the semiconductor substrate. A photoresist layer is provided over the hardmask layer. The phoresist layer is patterned. An exposed portion of the hardmask layer is removed from one of the pFET region and nFET region with the patterned photoresist acting as an etch mask to define a masked region and an unmasked region. An epitaxial silicon layer is formed on the active area in the unmasked region. A protective oxide layer is formed overlying the epitaxial silicon layer. The hardmask layer is removed from the masked region with the protective oxide layer protecting the epitaxial silicon layer during such removal step. The protective oxide layer is removed from the epitaxial silicon layer.