Invention Grant
- Patent Title: Methods and systems for metal-assisted chemical etching of substrates
- Patent Title (中): 金属辅助化学蚀刻基板的方法和系统
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Application No.: US12751080Application Date: 2010-03-31
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Publication No.: US08278191B2Publication Date: 2012-10-02
- Inventor: Owen Hildreth , Ching Ping Wong , Yonghao Xiu
- Applicant: Owen Hildreth , Ching Ping Wong , Yonghao Xiu
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Disclosed herein are various embodiments related to metal-assisted chemical etching of substrates on the micron, sub-micron and nano scales. In one embodiment, among others, a method for metal-assisted chemical etching includes providing a substrate; depositing a non-spherical metal catalyst on a surface of the substrate; etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent; and removing the etched substrate from the etchant solution.
Public/Granted literature
- US20100248449A1 Metal-Assisted Chemical Etching of Substrates Public/Granted day:2010-09-30
Information query
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