发明授权
- 专利标题: Method to direct pattern metals on a substrate
- 专利标题(中): 将图案金属引导到基底上的方法
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申请号: US12210781申请日: 2008-09-15
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公开(公告)号: US08278220B2公开(公告)日: 2012-10-02
- 发明人: Theresa Holtermann , Anthony Graupera , Michael Dibattista
- 申请人: Theresa Holtermann , Anthony Graupera , Michael Dibattista
- 申请人地址: US OR Hillsboro
- 专利权人: FEI Company
- 当前专利权人: FEI Company
- 当前专利权人地址: US OR Hillsboro
- 代理机构: Scheinberg & Associates, PC
- 代理商 Michael O. Scheinberg; Robert J. Amedeo
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning.
公开/授权文献
- US20100032302A1 METHOD TO DIRECT PATTERN METALS ON A SUBSTRATE 公开/授权日:2010-02-11
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