发明授权
- 专利标题： Selective etching and formation of xenon difluoride
- 专利标题（中）： 选择性蚀刻和形成氙二氟化物
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申请号： US12360588申请日： 2009-01-27
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公开(公告)号： US08278222B2公开(公告)日： 2012-10-02
- 发明人: Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
- 申请人： Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
- 申请人地址： US PA Allentown
- 专利权人： Air Products and Chemicals, Inc.
- 当前专利权人： Air Products and Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 代理商 Lina Yang
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
公开/授权文献
- US20100022095A1 Selective Etching and Formation of Xenon Difluoride 公开/授权日：2010-01-28