发明授权
US08278716B2 Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor 有权
制造多晶硅的方法,薄膜晶体管,制造薄膜晶体管的方法以及包括薄膜晶体管的有机发光二极管显示装置

Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor
摘要:
A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.
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