发明授权
- 专利标题： Thin film transistor substrate and method of manufacturing the same
- 专利标题（中）： 薄膜晶体管基板及其制造方法
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申请号： US12496298申请日： 2009-07-01
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公开(公告)号： US08278723B2公开(公告)日： 2012-10-02
- 发明人: Kyung-Wook Kim , Jong-Hwan Lee , Young-Woon Kho , Jae-Hyun Park
- 申请人： Kyung-Wook Kim , Jong-Hwan Lee , Young-Woon Kho , Jae-Hyun Park
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2008-0086890 20080903
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A thin film transistor substrate capable of appropriately maintaining driving performance even when there is a difference between manufacturing processes and a method of manufacturing the same. The thin film transistor substrate includes: a gate electrode formed on an insulating substrate; a semiconductor layer formed on the gate electrode; and a plurality of thin film transistors each having a source electrode and a drain electrode that are formed on the gate electrode and the semiconductor layer so as to be spaced apart from each other. At least one of the plurality of thin film transistors is a dummy thin film transistor that does not have the semiconductor layer between the source electrode and the drain electrode.
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