发明授权
- 专利标题: ESD protection for RF circuits
- 专利标题(中): 射频电路的ESD保护
-
申请号: US12908064申请日: 2010-10-20
-
公开(公告)号: US08279570B2公开(公告)日: 2012-10-02
- 发明人: Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming Hsien Tsai , Tse-Hua Lu , Ping-Fang Hung
- 申请人: Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming Hsien Tsai , Tse-Hua Lu , Ping-Fang Hung
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H02H3/20
- IPC分类号: H02H3/20 ; H02H9/04
摘要:
An electrostatic discharge (ESD) circuit, adaptive to a radio frequency (RF) device, which includes a RF circuit coupled between a VDD power rail and a VSS power rail and having a RF I/O pad, includes an ESD clamp circuit coupled between a VDD power rail node and the VSS power rail node and a LC-tank structure coupled between the VDD power rail node and the VSS power rail node and to the RF I/O pad. The LC-tank structure includes a first ESD block between the VDD power rail node and the RF I/O pad, and a second ESD block between the VSS power rail node and the RF I/O pad. At least one of the first and second ESD blocks includes a pair of diodes coupled in parallel with each other and an inductor coupled in series with one of the pair of diodes.
公开/授权文献
- US20120099228A1 ESD PROTECTION FOR RF CIRCUITS 公开/授权日:2012-04-26
信息查询