Invention Grant
- Patent Title: ESD protection for RF circuits
- Patent Title (中): 射频电路的ESD保护
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Application No.: US12908064Application Date: 2010-10-20
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Publication No.: US08279570B2Publication Date: 2012-10-02
- Inventor: Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming Hsien Tsai , Tse-Hua Lu , Ping-Fang Hung
- Applicant: Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming Hsien Tsai , Tse-Hua Lu , Ping-Fang Hung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H9/04

Abstract:
An electrostatic discharge (ESD) circuit, adaptive to a radio frequency (RF) device, which includes a RF circuit coupled between a VDD power rail and a VSS power rail and having a RF I/O pad, includes an ESD clamp circuit coupled between a VDD power rail node and the VSS power rail node and a LC-tank structure coupled between the VDD power rail node and the VSS power rail node and to the RF I/O pad. The LC-tank structure includes a first ESD block between the VDD power rail node and the RF I/O pad, and a second ESD block between the VSS power rail node and the RF I/O pad. At least one of the first and second ESD blocks includes a pair of diodes coupled in parallel with each other and an inductor coupled in series with one of the pair of diodes.
Public/Granted literature
- US20120099228A1 ESD PROTECTION FOR RF CIRCUITS Public/Granted day:2012-04-26
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