Provided is a nonvolatile memory element which is capable of performing a stable resistance change operation at a low breakdown voltage.A nonvolatile memory element (100) includes: a first electrode layer (103); a second electrode layer (105); and a variable resistance layer (104) which is placed between the electrodes (103 and 105), and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrodes (103 and 105). The variable resistance layer (104) is formed by stacking a first oxide layer (104a) including an oxide of a first transition metal and a second oxide layer (104b) including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer (104b) is larger than a dielectric constant of the first oxide layer (104a); and (2) a band gap of the second oxide layer (104b) is smaller than a band gap of the first oxide layer (104a).