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US08279904B2 Semiconductor light-emitting device 有权
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Semiconductor light-emitting device
摘要:
A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1−x1)N, where 0
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