Nitride-based semiconductor light emitting device and methods of manufacturing the same
    2.
    发明授权
    Nitride-based semiconductor light emitting device and methods of manufacturing the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号:US08304791B2

    公开(公告)日:2012-11-06

    申请号:US11812435

    申请日:2007-06-19

    IPC分类号: H01L33/32

    CPC分类号: H01L33/06 H01L33/32

    摘要: A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0≦y

    摘要翻译: 提供具有能够提高光输出性能的结构的氮化物系半导体发光元件及其制造方法。 有源层可以包括在n型半导体层上由In x Ga(1-x)N(0.01和n 1; x&nl; E; 0.05)形成的第一阻挡层,由InyGa(1-y)N(0& ; y <0.01),掺杂有包含N(氮)元素和Si(硅)元素中的至少一种的抗缺陷剂,由InzGa(1-z)形成的量子阱层, 在第一扩散阻挡层上的N(0.25和nlE; z&nlE; 0.35),在量子阱层上由InyGa(1-y)N(0&lt; 1E; y <0.01)形成的第二扩散阻挡层,并掺杂有抗缺陷 包括N元素和Si元素中的至少一种的第二阻挡层,以及由第二扩散阻挡层上的In x Ga(1-x)N(0.01&amp; N e; x&amp; 氮化物系半导体发光元件可以包括依次层叠在基板上的n型半导体层,有源层和p型半导体层。

    Semiconductor optoelectronic device and method of fabricating the same
    5.
    发明授权
    Semiconductor optoelectronic device and method of fabricating the same 有权
    半导体光电器件及其制造方法

    公开(公告)号:US07724795B2

    公开(公告)日:2010-05-25

    申请号:US11878495

    申请日:2007-07-25

    IPC分类号: H01S5/00

    摘要: Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.

    摘要翻译: 提供了一种半导体光电器件,其可以包括分别包括量子阱和在衬底上的势垒层,有源层上和下面的上波导层和下层波导层的有源层,以及位于有源层之上和之下的上和下包层 上下波导层。 半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层(OCL),并且具有小于上波导层的能隙的能隙,并且等于或大于能隙 以及有源层和下波导层之间的下部OCL,并且具有小于下部波导层的能隙的能隙,并且等于或小于势垒层的能隙。 还提供了一种制造半导体光电器件的方法。

    Laser display device
    6.
    发明申请
    Laser display device 审中-公开
    激光显示装置

    公开(公告)号:US20070183466A1

    公开(公告)日:2007-08-09

    申请号:US11513224

    申请日:2006-08-31

    IPC分类号: H01S3/10 H01S3/00

    CPC分类号: H04N9/3129

    摘要: A laser display device is provided which includes: a light source emitting at least one laser beam; a light modulation unit for modulating the laser beam emitted from the light source according to an image signal; a scanning unit scanning the laser beam modulated in the light modulation unit in a main scanning direction and in a sub-scanning direction; and an image unit in which an image is formed having a phosphor layer in which excitation light is generated by a laser beam scanned by the scanning unit.

    摘要翻译: 提供了一种激光显示装置,其包括:发射至少一个激光束的光源; 光调制单元,用于根据图像信号调制从光源发射的激光束; 扫描单元沿主扫描方向和副扫描方向扫描在调光单元中调制的激光束; 以及其中形成有图像的图像单元,其具有通过由扫描单元扫描的激光束产生激发光的荧光体层。

    Semiconductor optoelectronic device and method of fabricating the same
    9.
    发明申请
    Semiconductor optoelectronic device and method of fabricating the same 有权
    半导体光电器件及其制造方法

    公开(公告)号:US20080095492A1

    公开(公告)日:2008-04-24

    申请号:US11878495

    申请日:2007-07-25

    IPC分类号: G02B6/12

    摘要: Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.

    摘要翻译: 提供了一种半导体光电器件,其可以包括分别包括量子阱和在衬底上的势垒层,有源层上和下面的上波导层和下层波导层的有源层,以及位于有源层之上和之下的上和下包层 上下波导层。 半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层(OCL),并且具有小于上波导层的能隙的能隙,并且等于或大于能隙 以及有源层和下波导层之间的下部OCL,并且具有小于下部波导层的能隙的能隙,并且等于或小于势垒层的能隙。 还提供了一种制造半导体光电器件的方法。

    Nitride-based semiconductor light emitting device and methods of manufacturing the same
    10.
    发明申请
    Nitride-based semiconductor light emitting device and methods of manufacturing the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号:US20080012002A1

    公开(公告)日:2008-01-17

    申请号:US11812435

    申请日:2007-06-19

    IPC分类号: H01L33/00

    CPC分类号: H01L33/06 H01L33/32

    摘要: A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0≦y≦0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of InzGa(1-z)N (0.25≦z≦0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of InyGa(1-y)N (0≦y≦0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on the second diffusion barrier layer. The nitride-based semiconductor light emitting device may include an n-type semiconductor layer, the active layer, and a p-type semiconductor layer that are sequentially stacked on a substrate.

    摘要翻译: 提供具有能够提高光输出性能的结构的氮化物系半导体发光元件及其制造方法。 有源层可以包括在n型半导体层上由In x Ga(1-x)N(0.01 <= x <= 0.05)形成的第一势垒层 ,在第一阻挡层上由In(x)y(1-y)N(0 <= y <0.01))形成的第一扩散阻挡层,并掺杂有 包括N(氮)元素和Si(硅)元素中的至少一种元素的抗缺陷剂,由In(z)(1-z)形成的量子阱层 在第一扩散阻挡层上的N(0.25 <= z <= 0.35),由In Y y(1-y)N(0)表示的第二扩散阻挡层 并且掺杂有包含N元素和Si元素中的至少一种的抗缺陷剂,以及由In元素和Si元素形成的第二势垒层, 在第二扩散阻挡层上的Ga(1-x)N(0.01 <= x <= 0.05)。 氮化物系半导体发光元件可以包括依次层叠在基板上的n型半导体层,有源层和p型半导体层。