发明授权
- 专利标题： Semiconductor device fabrication method and pattern formation mold
- 专利标题（中）： 半导体器件制造方法和图案形成模具
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申请号： US12926359申请日： 2010-11-12
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公开(公告)号： US08282868B2公开(公告)日： 2012-10-09
- 发明人: Ikuo Yoneda , Shunko Magoshi
- 申请人： Ikuo Yoneda , Shunko Magoshi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2007-16816 20070126
- 主分类号： B29C59/00
- IPC分类号： B29C59/00
摘要：
According to the present invention, there is provided a semiconductor device fabrication method comprising, bringing a mold having a predetermined pattern into contact with at least a portion of an imprinting material formed on a substrate to be processed, and forming the pattern on the substrate to be processed by sequentially transferring the pattern for each shot, wherein one of a dicing region and a monitor pattern formation region of the substrate to be processed is coated with the imprinting material.
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