发明授权
- 专利标题: One-time programmable memory
- 专利标题(中): 一次性可编程存储器
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申请号: US12802206申请日: 2010-06-02
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公开(公告)号: US08283731B2公开(公告)日: 2012-10-09
- 发明人: Harry Shengwen Luan
- 申请人: Harry Shengwen Luan
- 申请人地址: US CA Santa Clara
- 专利权人: Kilopass Technologies, Inc.
- 当前专利权人: Kilopass Technologies, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/70
- IPC分类号: H01L21/70
摘要:
The present invention provides a programmable memory array including a plurality of memory cells. At least one and preferably each memory cell of the plurality of memory cells include an isolation layer formed of a dielectric material, a field effect transistor, and a programmable element. The programmable element includes a conductive gate, a gate insulator present beneath the conductive gate, and a semiconductor body present under the gate insulator. The semiconductor body of the programmable element is of a different doping type then the doping of the channel region of the field effect transistor. Apart from these components, the memory cell also includes a bit line connected to the source of the field effect transistor, a select word line connected to the gate of the field effect transistor and a program word line connected to the conductive gate of the programmable element.
公开/授权文献
- US20110298054A1 One-time programmable memory 公开/授权日:2011-12-08