发明授权
- 专利标题： Lead frame interconnect scheme with high power density
- 专利标题（中）： 具有高功率密度的引线框架互连方案
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申请号： US12760365申请日： 2010-04-14
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公开(公告)号： US08283760B1公开(公告)日： 2012-10-09
- 发明人: Ken Pham , Anindya Poddar , Ashok S. Prabhu
- 申请人： Ken Pham , Anindya Poddar , Ashok S. Prabhu
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L23/48
摘要：
An integrated circuit package configured to incorporate a lead frame and methods for its making are is described. The package comprising an IC with aluminum bond pads in communication with circuitry of the die with lead frame with silver bond pads. The package having gold bumps bonded between the aluminum bond pad of the die and the silver bond pad of the lead frame. The package including an encapsulant envelope and including various materials and bond pad structures and constructed in a manner formed by thermosonically or thermocompressionally bonding the gold balls to the bond pads. Also, disclosed are methods of making the package.
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